* RDS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A
* Ultra Low Gate Charge ( Typ.Qg = 30.4nC)
* Low Effective Output Capacitance
* 100% Avalanche Tested

D G G D S TO-220 FCP Series GD S TO-220F FCPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted S.

The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise proce.

FCP130N60

FCP104N60

FCP104N60F

FCP110N65F

FCP11N60

FCP11N60F

FCP11N60N

FCP125N60E

FCP125N65S

FCP125N65S3

FCP125N65S3R0

FCP150N65F

FCP165N60E